unisonic technologies co., ltd ut65n03 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r502-556.a 65 amps, 30 volts, 3.7m ? n-channel power mosfet ? description the utc ut65n03 is a n-channel trench technology using utc?s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. ? features * v ds = 30v, i d =65a, * r ds(on) =65m ? @ v gs =10v r ds(on) =97m ? @ v gs =4.5v * low gate charge (typ. 25nc) * high switching speed * high power and current handling capability * rohs compliant ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut65n03l-ta3-t UT65N03G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
ut65n03 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-556.a ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous i d 65 a drain current pulsed i dm 130 a single pulsed avalanche energy e as 71.7 mj 54 w power dissipation p d 0.43 w/c junction temperature t j 150 c storage temperature t stg -55~+175 c note: absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 2.3 c/w ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v drain-source leakage current i dss v ds =24v, v gs =0v 1 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics (note 2) gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.3 1.7 3 v v gs =10v, i d =30a 6.5 8.4 static drain-source on-state resistance r ds(on) v gs =4.5v, i d =30a 9.7 14.6 m ? dynamic parameters input capacitance c iss 1177 1400 pf output capacitance c oss 555 pf reverse transfer capacitance c rss v gs =0v, f=1mhz, v ds =20v 218 pf switching parameters total gate charge q g 12.2 16 nc gate to source charge q gs 2.95 nc gate to drain charge q gd v gs =5v, v ds =10v, i d =30a 6.08 nc turn-on delay time t d(on) 6.3 ns rise time t r 18.6 ns turn-off delay time t d(off) 20.3 ns fall-time t f v gs =10v, v ds =25v, i d =30a, rg=3 ? 8.8 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =20a, v gs =10v 0.85 1.1 v maximum body-diode continuous current i s 65 a maximum body-diode pulsed current i sm 130 a note: 1. pulse test: pulse width 300 _s, duty cycle 2%. 2. switching characteristics are indepen dent of operating junction temperatures. 3. l=1.0mh, i as =12a, v dd =24v, r g =25 ? , satarting t j =25c.
ut65n03 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-556.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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